AP120P02D datasheet(1/7 Pages) APME

No. de pieza	AP120P02D

Descripción Electrónicos	-20V P-Channel Enhancement Mode MOSFET

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP120P02D

-20V P-Channel Enhancement Mode MOSFET

AP120P02D REV1.0

永源微電子科技有限公司

Description

The AP120P02D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -20V ID =-120A

RDS(ON) < 2.8mΩ @ VGS=4.5V (Type：2.1mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP120P02D

TO-252-3L

AP120P02D XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-120

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-66

A

IDM

Pulsed Drain Current2

-340

A

EAS

Single Pulse Avalanche Energy3

400

mJ

IAS

Avalanche Current

-50

A

PD@TC=25℃

Total Power Dissipation4

52.1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃

/W

RθJC

Thermal Resistance Junction-Case1

1.8

℃

/W

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AP120P02D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP120P02D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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