AP280N08MP

85V N-Channel Enhancement Mode MOSFET

AP280N08MP RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

80

90

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ=25°C

VDS = 80V, VGS = 0V

-

-

1

μA

Zero Gate Voltage Drain Current TJ=100°C

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

2

3

4

V

RDS(on)

Drain-Source on-Resistance4

VGS = 10V, ID = 20A

-

2.1

2.6

mΩ

gfs

Forward Transconductance4

VDS = 10V, ID =20A

-

70

-

S

Ciss

Input Capacitance

VDS = 40V, VGS =0V,

f =1MHz

-

8980

-

pF

Coss

Output Capacitance

-

1560

-

Crss

Reverse Transfer Capacitance

-

90

-

Rg

Gate Resistance

f=1MHz

-

2.4

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 40V, ID=

20A

-

140

-

nC

Qgs

Gate-Source Charge

-

37.5

-

Qgd

Gate-Drain Charge

-

37.5

-

td(on)

Turn-on Delay Time

VGS =10V, VDD = 40V, RG

= 3Ω, ID= 20A

-

27.5

-

ns

tr

Rise Time

-

82

-

td(off)

Turn-off Delay Time

-

85

-

tf

Fall Time

-

52

-

trr

Body Diode Reverse Recovery Time

IF=20A, di/dt = 100A/μs

-

98

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

166

-

nC

VSD

Diode Forward Voltage4

IS = 20A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current TC=25°C

-

-

310

A

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is VDD=64VGS=10V,L=0.1mH,IAS=53.8A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.