AP3407AI-L datasheet(1/7 Pages) APME

No. de pieza	AP3407AI-L

Descripción Electrónicos	-30V P-Channel Enhancement Mode MOSFET

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP3407AI-L

-30V P-Channel Enhancement Mode MOSFET

AP3407AI-L REV1.0

永源微電子科技有限公司

Description

The AP3407AI uses advanced Trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -30V ID =-5.2A

RDS(ON) < 45mΩ @ VGS=10V (Type：35mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3407AI

SOT23L

3407

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

-30

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ -10V1

-5.2

A

ID@TC=100

℃

Continuous Drain Current, VGS @ -10V1

-3.6

A

IDM

Pulsed Drain Current note1

-20.4

A

PD

Power Dissipation TA = 25

℃

2.15

W

RθJA

Thermal Resistance, Junction to Ambient

104

℃/W

RθJC

Thermal Resistance from Junction to Ambient2

125

℃/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

℃

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AP3407AI-L Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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