AP3407BI

-30V P-Channel Enhancement Mode MOSFET

AP3407BI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= -250μA

-30

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS= 0V

-

-

-1

μA

IGSS

Gate-Source Leakage

VDS= 0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate-Source Threshold voltage

VDS= VGS, ID= -250μA

-1.2

-1.5

-2.5

V

RDS(on)

Drain-Source on-State Resistance3

VGS= -10V, ID= -4A

-

45

58

mΩ

VGS= -4.5V, ID= -3A

-

62

75

Ciss

Input Capacitance

VGS = 0V , VDS = -15V,

f = 1.0MHz

-

520

-

pF

Coss

Output Capacitance

-

70

-

Crss

Reverse Transfer Capacitance

-

60

-

Qg

Total Gate Charge

VGS = -10V, VDS = -15V,

ID = -4.1A

-

12

-

nC

Qgs

Gate−Source Charge

-

3

-

Qgd

Gate−Drain Charge

-

2

-

td(on)

Turn-on Delay Time

VGS= -10V, VDS= -15V ,

RL= 15Ω,RGEN= 2.5Ω

-

5

-

ns

tr

Rise Time

-

28

-

td(off)

Turn-off Delay time

-

30

-

tf

Fall Time

-

35

-

VSD

Diode Forward Voltage3

IS = -4.1A, VGS = 0V

-

-

-1.2

V

IS

Continuous Source Current

-

-

-4.1

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.