AP3407CI

-30V P-Channel Enhancement Mode MOSFET

AP3407CI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μA

-30

-33

V

IDSS

Zero Gate Voltage Drain Current

VDS=-30V,VGS=0V

-1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=-250μA

-1.0

-1.5

-2.4

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-3A

70

85

mΩ

VGS=-4.5V, ID=-2A

100

120

Ciss

Input Capacitance

VDS=-10V,VGS=0V,f=1MHZ

365

pF

Coss

Output Capacitance

59

Crss

Reverse Transfer Capacitance

45

Qg

Total Gate Charge

VGS=-10V,VDS=-15V,ID=-3A

7.6

nC

Qgs

Gate-Source Charge

1.64

Qgd

Gate-Drain Charge

1.22

Qrr

Reverse Recovery Chrage

IF=-3A, di/dt=100A/us

3.8

trr

Reverse Recovery Time

25

ns

tD(on)

Turn-on Delay Time

VGS=-10V, VDS=-15V, ID=-

1A RGEN=2.5Ω

3.2

tr

Turn-on Rise Time

17.8

tD(off)

Turn-off Delay Time

18

tf

Turn-off fall Time

23.2

VSD

Diode Forward Voltage

IS=-3A,VGS=0V

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.