AP3416AI datasheet(1/7 Pages) APME

No. de pieza	AP3416AI

Descripción Electrónicos	20V N-Channel Enhancement Mode MOSFET

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP3416AI

20V N-Channel Enhancement Mode MOSFET

AP3416AI REV1.1

永源微電子科技有限公司

Description

The AP3416AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =6.8A

RDS(ON) < 22mΩ @ VGS=4.5V （Type:15mΩ）

ESD≥2500HBM

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3416AI

SOT23L

3416

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±12

V

ID@TA=25

℃

Continuous Drain Current

6.8

A

ID@TA=70

℃

Continuous Drain Current

6.0

A

IDM

Pulsed Drain Current2

30

A

PD@TA=25

℃

Total Power Dissipation3

1.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

125

℃/W

RθJC

Thermal Resistance Junction-ambient 1

85

℃

/W

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AP3416AI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP3416AI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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