STPS1L30MF datasheet(4/7 Pages) STMICROELECTRONICS

No. de pieza	STPS1L30MF

Descripción Electrónicos	Low drop power Schottky rectifier in flat package

PDF	7 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Characteristics

STPS1L30MF

4/7

Figure 7.

Reverse leakage currrent versus

reverse voltage applied (typical

values)

Figure 8.

Reverse leakage currrent versus

junction temperature (typical

values)

Figure 9.

Junction capacitance versus

reverse voltage applied (typical

values)

Figure 10.

Forward voltage drop versus

forward current

Figure 11.

Thermal resistance junction to

ambient versus copper surface

under tab (epoxy printed board

FR4, Cu=35 µm, typical values)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1012141618202224262830

I (mA)

V (V)

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

100

125

150

I (mA)

T (°C)

V =30V

100

1000

100

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

(A)

(V)

T =25°C

(maximum values)

T =85°C

(maximum values)

T =85°C

(typical values)

100

150

200

250

100

120

140

160

180

200

(°C/W)

th(j-a)

S(mm²)

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