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IXTR170P10P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza IXTR170P10P
Descripción Electrónicos  P-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTR170P10P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISF1409
eq IXTR170P10P
P-Channel MOSFET Transistor
www.iscsemi.com
1
FEATURES
· Drain Current -ID= -100A@ TC=25℃
· Drain Source Voltage -VDSS= -100V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 15.4mΩ(Max)@VGS= -10V
APPLICATIONS
·
DC Choppers
·
High-Side Switches
·
Current Regulators
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
-100
A
IDM
Drain Current-Single Pulse
-510
A
PD
Total Dissipation
300
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.42
℃
/W


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