DMTH4008LPDW

Document number: DS42438 Rev. 1 - 2

2 of 7

www.diodes.com

May 2020

© Diodes Incorporated

DMTH4008LPDW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 5)

TA = +25°C

TA = +100°C

ID

10.0

7.1

A

Continuous Drain Current (Note 6)

TC = +25°C

TC = +100°C

ID

46.2

32.7

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

184

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

43.7

A

Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)

ISM

184

A

Avalanche Current, L = 0.1mH

IAS

23.1

A

Avalanche Energy, L = 0.1mH

EAS

26.6

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

2.67

W

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

56.6

°C/W

Total Power Dissipation (Note 6)

TC = +25°C

PD

39.4

W

Thermal Resistance, Junction to Case (Note 6)

RθJC

3.8

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

40

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 32V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.2

1.88

2.3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

9.5

12.3

m

Ω

VGS = 10V, ID = 20A

—

11.9

17.5

m

Ω

VGS = 4.5V, ID = 10A

Diode Forward Voltage

VSD

—

0.9

1.2

V

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

881

—

pF

VDS = 20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

496

—

pF

Reverse Transfer Capacitance

Crss

—

19.5

—

pF

Gate Resistance

Rg

—

2.06

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 10V)

Qg

—

12.3

—

nC

VDS = 20V, ID = 20A

Total Gate Charge (VGS = 4.5V)

Qg

—

5.8

—

nC

Gate-Source Charge

Qgs

—

2.6

—

nC

Gate-Drain Charge

Qgd

—

1.6

—

nC

Turn-On Delay Time

tD(ON)

—

3.82

—

ns

VDD = 20V, VGS = 10V,

Rg = 3Ω, ID = 20A

Turn-On Rise Time

tR

—

4.76

—

ns

Turn-Off Delay Time

tD(OFF)

—

12.6

—

ns

Turn-Off Fall Time

tF

—

4.83

—

ns

Body Diode Reverse Recovery Time

tRR

—



31.9

—



ns

IF = 20A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



25.0

—



nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.