APM32F003F6P6-R datasheet(26/56 Pages) GEEHY

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Symbol

description

Min

Max

Unit

VIN

Input voltage on the true open drain pin

VSS-0.3

6.5

Input voltage on other pins

VSS-0.3

VDD+0.3

|VDDx-VDD|

Voltage difference between different power supply

pins

|VSSx-VSS|

Voltage difference between different grounding

pins

5.3.3.

Maximum rated current characteristics

Table 18 Maximum rated current characteristics

Symbol

description

Max

Unit

IVDD

Total current through VDD power line (supply current)

100

IVSS

Total current through VSS ground (outflow current)

IIO

Current sink on any I/O and control pins

Pull current on any I/O and control pins

-20

IINJ(PIN)

Injection current of NRST pin

±4

Injection current of OSC_IN pin of HXT and OSC_IN pin of

LXT

±4

Injection current of other pins

±4

ΣIINJ(PIN)

Total injection current on all I/O and control pins

±20

5.3.4.

Maximum electrostatic characteristics

Table 19 Electrostatic discharge (ESD)

（1）

Symbol

Parameter

Condition

Max

Unit

VESD(HBM)

Electrostatic discharge voltage (manikin)

TA=+25°C

8000

VESD(CDM)

Electrostatic discharge voltage (charging

equipment model)

TA=+25°C

2000

Note: Samples are measured by a third-party testing organization and are not

tested in production.

5.3.5.

Static latch

Table 20 Static latch

Symbol

Parameter

Condition

Type

Static latch class

TA=+25°C/105°C

APM32F003F6P6-R Datasheet(PDF) 26 Page - Geehy Semiconductor Co., Ltd.

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