DIO32276

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© 2024 DIOO MICROCIRCUITS CO., LTD

DIO32276• Rev. 2.0

DC Electrical Characteristics

VCC = 1.65 to 5.5 V, VCC (Typ.) = 3.3 V, TA= 25°C, unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIH

Control pin input high

voltage (SEL, MUTE)

VCC = 3.3 V,

C_EXT = Float

1.5

V

VIL

Control pin input low

voltage (SEL, MUTE)

VCC = 3.3 V,

C_EXT = Float

0.5

V

ION

Switch-to-GND on

leakage current

L1, R1, L2, R2 = -3 V to 3 V,

LSPKR, RSPKR = Float (ISW = 0 mA),

MUTE =Low, SEL = 0 or VCC,

C_EXT = Float

-2

2

μA

INO_MUTE

Switch-to-GND OFF

leakage current

(when muted)

L1, R1, L2, R2 = -3 V to 3 V,

LSPKR, RSPKR = Float (ISW = 0 mA),

MUTE = High, SEL = 0 or VCC,

C_EXT = Float

2

μA

IOFF

Input leakage current

(1)

L1, R1, L2, R2 = -3 V to 3 V,

LSPKR, RSPKR= Float (ISW = 0 mA),

MUTE = Low, SEL = 0 or VCC,

C_EXT = Float

-2

2

μA

IIN

Control input leakage

current

(2)

(SEL, MUTE)

L1, R1, L2, R2 = -3 V to 3 V,

LSPKR, RSPKR = Float (ISW = 0 mA),

C_EXT = Float

2

μA

ICC

VCC supply current

MUTE = Low, SEL = 0 or VCC,

C_EXT = Float

20

30

μA

ICCZ

VCC Hi-Z supply current

MUTE = High, SEL = 0 or VCC,

C_EXT = Float

1

μA

ICCT

Increase in ICC per control

voltage

MUTE = Low, SEL = 0 or 1.8 V,

SEL = Low, MUTE = 0 or 1.8 V,

C_EXT = Float

2

μA

RON

Switch on resistance

ISW = 100 mA, VSW = -3 V to 3 V,

C_EXT = Float

0.8

1

Ω

ΔRON

On resistance matching,

channel to channel

ISW = 100 mA, VSW = -3 V to 3 V

C_EXT = Float

50

mΩ

RFLAT

On resistance flatness

ISW = 100 mA, VSW = -3 V to 3 V,

C_EXT = Float

10

mΩ

Note:

(1) Only valid for VSW > 0 V.

(2) VMUTE ≤ VCC + 0.3 otherwise additional input leakage current may flow.

(3) Specifications subject to change without notice.