2SA1371 datasheet(1/3 Pages) ISC

No. de pieza	2SA1371

Descripción Electrónicos	Silicon PNP Power Transistor

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2SA1371

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -300V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): -0.6V(Max) @IC= -20mA

APPLICATIONS

· Color TV chroma output and high breakdown

Voltage driver

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-300

V

VCEO

Collector-Emitter Voltage

-300

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-0.1

A

ICP

Collector Current-Pulse

-0.2

A

PC

Total Power Dissipation

1.0

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

12.5

℃

/W

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2SA1371 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2SA1371 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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