Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Mexican  ▼
ALLDATASHEET.COM.MX

X  

Preview PDF HTML

BPW-34 Datasheet(PDF) 3 Page - ams-OSRAM AG

No. de pieza BPW-34
Descripción Electrónicos  Silicon PIN Photodiode
PDF  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  AMSOSRAM [ams-OSRAM AG]
Página de inicio  https://ams-osram.com/
Logo AMSOSRAM - ams-OSRAM AG

BPW-34 Datasheet(HTML) 3 Page - ams-OSRAM AG

  BPW-34 Datasheet HTML 1Page - ams-OSRAM AG BPW-34 Datasheet HTML 2Page - ams-OSRAM AG BPW-34 Datasheet HTML 3Page - ams-OSRAM AG BPW-34 Datasheet HTML 4Page - ams-OSRAM AG BPW-34 Datasheet HTML 5Page - ams-OSRAM AG BPW-34 Datasheet HTML 6Page - ams-OSRAM AG BPW-34 Datasheet HTML 7Page - ams-OSRAM AG BPW-34 Datasheet HTML 8Page - ams-OSRAM AG BPW-34 Datasheet HTML 9Page - ams-OSRAM AG Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 13 page
background image
BPW 34
3 Version 1.5 | 2020-01-08
Characteristics
T
A = 25 °C
Parameter
Symbol
Values
Spectral sensitivity
V
R = 5 V; Std. Light A; T = 2856 K
S
typ.
80 nA/lx
Wavelength of max sensitivity
λ
S max
typ.
920 nm
Spectral range of sensitivity
λ
10%
typ.
420 ... 1120
nm
Radiant sensitive area
A
typ.
7.02 mm²
Dimensions of active chip area
L x W
typ.
2.65 x 2.65
mm x mm
Half angle
φ
typ.
60 °
Dark current
V
R = 10 V
I
R
typ.
max.
2 nA
30 nA
Spectral sensitivity of the chip
λ = 850 nm
S
λ
typ.
0.62 A / W
Quantum yield of the chip
λ = 850 nm
η
typ.
0.90 Electrons
/ Photon
Open-circuit voltage
E
v = 1000 lx; Std. Light A; VR = 0 V
V
O
min.
typ.
300 mV
365 mV
Short-circuit current
E
v = 1000 lx; Std. Light A; VR = 0 V
I
SC
typ.
80 µA
Rise time
V
R = 5 V; RL = 50 Ω; λ = 850 nm; IP = 800 µA
t
r
typ.
0.02 µs
Fall time
V
R = 5 V; RL = 50 Ω; λ = 850 nm; IP = 800 µA
t
f
typ.
0.02 µs
Forward voltage
I
F = 100 mA; E = 0
V
F
typ.
1.3 V
Capacitance
V
R = 0 V; f = 1 MHz; E = 0
C
0
typ.
72 pF
Temperature coefficient of voltage
TC
V
typ.
-2.6 mV / K
Temperature coefficient of short-circuit current
Std. Light A
TC
I
typ.
0.18 % / K
Noise equivalent power
V
R = 10 V; λ = 850 nm
NEP
typ.
0.041 pW /
Hz1/2
Detection limit
V
R = 10 V; λ = 850 nm
D*
typ.
6.5e12 cm x
Hz1/2 / W



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com