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R7KA8M2AFDCAM Datasheet(PDF) 104 Page - Renesas Technology Corp

No. de pieza R7KA8M2AFDCAM
Descripción Electrónicos  Renesas Microcontrollers
PDF  295 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
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R7KA8M2AFDCAM Datasheet(HTML) 104 Page - Renesas Technology Corp

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SfVCC2
VPOR1
dt/dVCC
(VBAT enable case)
power on
period
operation period
power off period
(VBAT disable case)
SrVCC
SfVCC1
Figure 2.24
VCC rising and falling waveform
2.2.7
Power Supply Rise Gradient
Table 2.42
VCC_USB rise gradient characteristics at power on
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
VCC_USB rising gradient at power
on
SrVCC_U
SB
8.4
—
—
μs/V
—
Table 2.43
VCC_USBHS and AVCC_USBHS rise gradient characteristics at power on
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
VCC_USBHS (=AVCC_USBHS)
rising gradient at power on
SrVCC_U
SBHS
8.4
—
—
μs/V
—
2.2.8
Thermal Characteristics
Maximum value of junction temperature (Tj) must not exceed the value of section 2.2.1. Tj/Ta Definition.
Tj is calculated by either of the following equations.
● Tj = Ta + θja × Total power consumption
● Tj = Tt + Ψjt × Total power consumption
– Tj : Junction Temperature (°C)
– Ta : Ambient Temperature (°C)
– Tt : Top Center Case Temperature (°C)
– θja : Thermal Resistance of “Junction”-to-“Ambient” (°C/W)
– Ψjt : Thermal Resistance of “Junction”-to-“Top Center Case” (°C/W)
● Total power consumption = Voltage × (Leakage current + Dynamic current)
● Leakage current of IO = Σ (IOL × VOL) /Voltage + Σ (|IOH| × |VCC – VOH|) /Voltage
● Dynamic current of IO = Σ IO (Cin + Cload) × IO switching frequency × Voltage
– Cin: Input capacitance
– Cload: Output capacitance
Regarding θja and Ψjt, see Table 2.44.
RA8M2 Datasheet
2. Electrical Characteristics
R01DS0438EJ0130 Rev.1.30
Feb 27, 2026
Page 104 of 295



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