MJD340

MJD350

COMPLEMENTARY SILICON POWER TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

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COMPLEMENTARY PNP - NPN DEVICES

s

MEDIUM VOLTAGE CAPABILITY

s

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

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ELECTRICAL SIMILAR TO MJE340 AND

MJE350

APPLICATIONS

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SOLENOID/RELAY DRIVERS

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GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD340 and MJD350 form complementary

NPN - PNP pairs.

They are manufactured using Medium Voltage

Epitaxial Planar technology, resulting in a rugged

high performance cost-effective transistor.

INTERNAL SCHEMATIC DIAGRAM

June 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Valu e

Un it

NPN

MJD340

PNP

MJD350

Collector-Base Voltage (I E = 0)

300

V

300

V

Emitt er-Base Voltage (IC = 0)

3

V

Collector Current

0. 5

A

Collector Peak Current (tp = 25

0.75

A

W

Storage T emperature

-65 to 150

Max Operating Junction T emperature

150

For PNP types voltage and current values are negative.

DPAK

TO-252

(Suffix ”T4”)

1

3

1/5