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MJE210 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza MJE210
Descripción Electrónicos  SILICON PNP TRANSISTOR
PDF  4 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MJE210 Datasheet(HTML) 1 Page - STMicroelectronics

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MJE210
SILICON PNP TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
PNP TRANSISTOR
DESCRIPTION
The MJE210 is a silicon epitaxial-base PNP
transistor in Jedec SOT-32 plastic package,
designed for low voltage, low power, high gain
aydio amplifier applications.
INTERNAL SCHEMATIC DIAGRAM
September 1997
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
-40
V
VCEO
Collector-Emitter Voltage (IB = 0)
-25
V
VEBO
Base-Emitter Voltage (IC = 0)
-8
V
IC
Collector Current
-5
A
ICM
Collector Peak Current
-10
A
IB
Base Current
-1
A
Ptot
Total Power Dissipation at Tcase
≤ 25 oC
at Tamb
≤ 25 oC
15
1.5
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max Operating Junction Temperature
150
oC
1/4


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