3CD010 datasheet(1/2 Pages) ISC

No. de pieza	3CD010

Descripción Electrónicos	isc Silicon PNP Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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isc Silicon PNP Transistor

3CD010

www.iscsemi.com

1

FEATURES

· BVCEO > -30V

· ICM = -1.5A Peak Pulse Current

· Low Collector-Emitter Saturation Voltage

APPLICATIONS

· Low-frequency power amplification

· DC motor drive

· Low-speed DC power switch

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter peak Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

ICM

Peak Pulse Current

-1.5

A

PD

Power Dissipation

10

W

TJ

Junction Temperature

-55~175

℃

Tstg

Storage Temperature

-55~175

℃

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3CD010 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

3CD010 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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