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9DB433AFILF Datasheet(PDF) 6 Page - Renesas Technology Corp

No. de pieza 9DB433AFILF
Descripción Electrónicos  FOUR OUTPUT DIFFERENTIAL BUFFER FOR PCIE GEN1–3
PDF  18 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

9DB433AFILF Datasheet(HTML) 6 Page - Renesas Technology Corp

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9DB433
FOUR OUTPUT DIFFERENTIAL BUFFER FOR PCIE GEN1–3
IDT®
FOUR OUTPUT DIFFERENTIAL BUFFER FOR PCIE GEN1–3
6
9DB433
MAY 25, 2018
Electrical Characteristics–DIF_IN Clock Input Parameters
Electrical Characteristics–Current Consumption
Electrical Characteristics–Output Duty Cycle, Jitter, Skew and PLL Characteristics
TAMB=TCOM or TIND unless otherwise indicated, supply voltages per normal operation conditions; see Test Loads for Loading Conditions
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS NOTES
Input Crossover Voltage -
DIF_IN
VCROSS
Cross Over Voltage
150
375
900
mV
1
Input Swing - DIF_IN
VSWING
Differential value
300
mV
1
Input Slew Rate - DIF_IN
dv/dt
Measured differentially
0.6
8
V/ns
1,2
Input Leakage Current
IIN
VIN = VDD , VIN = GND
-5
5
uA
Input Duty Cycle
dtin
Measurement from differential waveform
45
55
%
1
Input Jitter - Cycle to Cycle
JDIFIn
Differential measurement
0
125
ps
1
1 Guaranteed by design and characterization, not 100% tested in production.
2 Slew rate measured through +/-75mV window centered around differential zero.
TA = TCOM or TIND; Supply Voltage VDD = 3.3 V +/-5%
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
NOTES
Operating Supply Current
IDD3.3OP
All outputs active @100MHz, CL = Full load;
93
120
mA
1
IDD3.3PD
All diff pairs driven
30
40
mA
1
IDD3.3PDZ
All differential pairs tri-stated
3
6
mA
1
1Guaranteed by design and characterization, not 100% tested in production.
Powerdown Current
TA = TCOM or TIND; Supply Voltage VDD = 3.3 V +/-5%
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
NOTES
-3dB point in High BW Mode (TIND)1.5
2.8
4.1
MHz
1
-3dB point in High BW Mode (TCOM)2
2.8
4
MHz
1
-3dB point in Low BW Mode
0.7
1.1
1.4
MHz
1
PLL Jitter Peaking
tJPEAK
Peak Pass band Gain
1.5
2
dB
1
Duty Cycle
tDC
Measured differentially, PLL Mode
45
49.2
55
%
1
Duty Cycle Distortion
tDCD
Measured differentially, Bypass Mode @100MHz
-2
-0.4
2
%
1,4
Bypass Mode, VT = 50% (TIND)
3500
4263
4900
ps
1
Bypass Mode, VT = 50% (TCOM)
3500
4115
4500
ps
1,5
tpdPLL
PLL Mode VT = 50%
-250
-45
250
ps
1
Skew, Output to Output
tsk3
VT = 50%
40.0
50/60
ps
1,5
PLL mode
21
50
ps
1,3
Additive
Jitter in Bypass Mode
3
10
ps
1,3
1Guaranteed by design and characterization, not 100% tested in production.
2 I
REF = VDD/(3xRR).
For RR = 475Ω (1%), IREF = 2.32mA. IOH = 6 x IREF and VOH = 0.7V @ ZO=50Ω.
3 Measured from differential waveform
4 Duty cycle distortion is the difference in duty cycle between the output and the input clock when the device is operated in bypass mode.
5 First number is commercial temp, second number is industrial temp.
Jitter, Cycle to cycle
tjcyc-cyc
PLL Bandwidth
BW
Skew, Input to Output
tpdBYP



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