GS-R12F_08 datasheet(7/13 Pages) STMICROELECTRONICS

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GS-R12F

Application information

7/13

4.6

Thermal shutdown

The shutdown block generates a signal that turns off the power stage if the temperature of

the internal chip goes higher than a fixed internal threshold (150 °C min

The sensing element of the chip is very close to the PDMOS area, so ensuring an accurate

and fast temperature detection.

An hysteresis of approximately 20 °C avoids that the devices turns on and off continuously.

4.7

Output voltage programming (GS-R12F0002.0 only)

The GS-R12F0002.0 output voltage is 5.54 V

± 4 %, to reduce this value connect a resistor

between pin 11 (FB) and pin 10 (Vout).

The resistor must be located very close to the proper pins, to minimize the injected noise

(see Figure 3).

The resistor value is calculated using the following formula:

Rv = [(Vout - 1.235) * 11.3] / 5.54 - Vout) --[kΩ]

Vout can be adjusted between 1.235 V (Rv = 0 Ω) and 5.54 V (Rv = open)

4.8

Loop compensation (GS-R12F0002.0 only)

If required by particular load conditions, it is possible to change the feedback loop

compensation, adding an external capacitor between pin 11 (FB) and pin 10 (Vout), which

will act as speed up (see Figure 4).

GS-R12F Datasheet(PDF) 7 Page - STMicroelectronics