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IXFN26N90 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXFN26N90 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc N-Channel MOSFET Transistor IXFN26N90 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS(TC=25℃ unless otherwise specified) SYMBO L PARAMETER CONDITIONS MIN Typ MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V; ID= 3mA 900 -- -- V IDSS Zero Gate Voltage Drain Current VDS= 720V; VGS= 0V -- -- 100 uA IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0V -- -- ± 200 nA VGS(th) Gate Threshold Voltage VDS =VGS; ID= 8mA 3.0 -- 5.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 13A -- -- 300 mΩ VSD Forward On-Voltage IS= 26A; VGS= 0V -- -- 1.5 V PACKAGE(UNIT:MM) PRODUCT DISCLAIMER ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. |
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