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SD2931 Datasheet(PDF) 1 Page - STMicroelectronics |
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SD2931 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA s GOLD METALLIZATION s EXCELLENT THERMAL STABILITY s COMMON SOURCE CONFIGURATION s POUT = 150W MIN. WITH 14 dB GAIN @175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2931 is intended for use in 50V dc large signal applications up to 230 MHz PIN CONNECTION November 1999 ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 125 V VDGR Drain-Gate Voltage (RGS = 1M Ω) 125 V VGS Gate-Source Voltage ±20 V ID Drain Current 16 A PDISS Power Dissipation 292 W Tj Max. Operating Junction Temperature 200 oC TSTG Storage Temperature -65 to 150 oC THERMAL DATA Rth(j-c) Rth(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance ∗ 0.6 0.2 oC/W oC/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). M174 epoxy sealed ® ORDER CODE BRANDING SD2931 TSD2931 1. Drain 3.Gate 2. Source 4. Source 1/4 |
Número de pieza similar - SD2931 |
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Descripción similar - SD2931 |
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