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ISCDM7106 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCDM7106 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISCDM7106 eq LSIC2SD120N40PA SiC Diode Modules www.iscsemi.com 1 FEATURES · Excellent surge capability · 175 °C maximum operating junction temperature APPLICATIONS · Solar inverters · Switch-mode power supplies · Battery Chargers Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 1200 V IF(AV) Average Rectified Output Current, Per Leg 42 A IFSM Non-Repetitive Peak Forward Surge Current TC = 25℃, tp = 10 ms, Half sine pulse 145 A TJ Max. Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER TYP UNIT Rth j-c Thermal Resistance,Junction to Case 0.48 ℃ /W ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Diode Forward Voltage IF= 20A;TJ= 25℃ -- 1.8 V IR Reverse Current VR=VRRM;TJ= 25℃ -- 100 uA |
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