ST93003 datasheet(1/7 Pages) STMICROELECTRONICS

No. de pieza	ST93003

Descripción Electrónicos	HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR

PDF	7 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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ST93003

HIGH VOLTAGE FAST-SWITCHING

PNP POWER TRANSISTOR

s

MEDIUM VOLTAGE CAPABILITY

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

APPLICATIONS:

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

DESCRIPTION

The device is manufactured using high voltage

Multi-Epitaxial

Planar

technology

for

high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The ST93003 is expressly designed for a new

solution to be used in compact fluorescent lamps,

where it is coupled with the ST83003, its

complementary NPN transistor.

®

INTERNAL SCHEMATIC DIAGRAM

October 2002

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VBE = 0)

-500

V

VCEO

Collector-Emitter Voltage (IB = 0)

-400

V

VEBO

Emitter-Base Voltage

(IC = 0,

IB = -0.75 A,

tp < 10

µs, Tj < 150oC)

V(BR)EBO

V

IC

Collector Current

-1.5

A

ICM

Collector Peak Current (tp < 5 ms)

-3

A

IB

Base Current

-0.75

A

IBM

Base Peak Current (tp < 5 ms)

-1.5

A

Ptot

Total Dissipation at Tc = 25

o C40

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

3

2

1

SOT-32

1/7

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