STB3NA80 datasheet(2/10 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj-amb

R thc-sin k

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead T emperature For Soldering Purpose

0.8

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symbo l

Parameter

Max Valu e

Unit

IAR

Avalanche Current, Repet itive or Not-Repetitive

(pulse width limited by Tj max,

δ <1%)

3.1

EAS

Single Pulse Avalanche Energy

(st arting Tj =25

oC, ID =IAR,VDD =50 V)

EAR

Repetitive Avalanche Energy

(pulse width limited by Tj max,

δ <1%)

2mJ

IAR

Avalanche Current, Repet itive or Not-Repetitive

(Tc =100

oC, pulse width limited by T

j max ,

δ <1%)

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

T est Con ditio ns

Min .

T yp.

Max.

Uni t

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µAVGS =0

800

IDSS

Zero G ate Volt age

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating x 0.8

Tc =125

250

1000

µA

IGSS

Gat e-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

ON (

∗)

Symbo l

Parameter

T est Con ditio ns

Min .

T yp.

Max.

Uni t

VGS(th)

Gat e Threshold Voltage VDS =VGS

ID = 250

µA

2.25

3.75

RDS(on)

Static Drain-source On

Resistance

VGS = 10V

ID =1.5 A

VGS =10V

ID =1.5 A

Tc = 100

3. 5

4.5

Ω

ID(on )

On Stat e Drain Current

VDS >ID(on) xRDS(on)max

VGS =10 V

3.1

DYNAMIC

Symbo l

Parameter

T est Con ditio ns

Min .

T yp.

Max.

Uni t

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRDS(on)max

ID = 1.5 A

1.5

Cis s

Coss

Crss

Input Capacit ance

Out put Capacitance

Reverse T ransf er

Capacitance

VDS =25 V

f = 1 MHz

VGS = 0

730

950

115

STB3NA80

2/10

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