RT3TSSM datasheet(1/4 Pages) ISAHAYA

No. de pieza	RT3TSSM

Descripción Electrónicos	Composite Transistor With Resistor

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISAHAYA [Isahaya Electronics Corporation]

Página de inicio	http://www.idc-com.co.jp

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DESCRIPTION

RT3TSSM is a composite transistor built with

RT1N150 chip and RT1P150 chip in SC-88 package.

FEATURE

Silicon epitaxial type

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

※

PNP built in transistor of ”－”sign is abbreviation.

PRELIMINARY

RT3TSSM

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to Base voltage

50

V

VEBO

Emitter to Base voltage

6

V

VCEO

Collector to Emitter voltage

50

V

IC

Collector current

100

mA

ICM

Peak Collector current

200

mA

PC

Collector dissipation（Total, Ta=25℃）

150

mW

Tj

Junction temperature

＋

150

℃

Tstg

Storage temperature

-55～＋150

℃

MARKING

S

TS

１

2

3

6

5

4

.

ISAHAYA ELECTRONICS CORPORATION

TERMINAL

CONNECTOR

①：

EMITTER1

②：

BASE1

③：

COLLECTOR2

④：

EMITTER2

⑤：

BASE2

⑥

:COLLECTOR1

JEITA：SC-88

1.25

2.1

①

②

③

⑤

④

⑥

R1

RTr1

①

②

④

⑤

RTr2

③

R1

⑥

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RT3TSSM Datasheet(PDF) 1 Page - Isahaya Electronics Corporation

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