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2STC5242 Datasheet(PDF) 1 Page - STMicroelectronics |
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2STC5242 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() July 2008 Rev 3 1/9 9 Features ■ High breakdown voltage VCEO = 230 V ■ Complementary to 2STA1962 ■ Fast-switching speed ■ Typical fT = 30 MHz Application ■ Audio power amplifier Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary 1 2 3 TO-3P Order code Marking Package Packaging 2STC5242 2STC5242 TO-3P Tube 2STC5242 High power NPN epitaxial planar bipolar transistor www.st.com |
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