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2STW4466 Datasheet(PDF) 1 Page - STMicroelectronics |
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2STW4466 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page  October 2007 Rev 1 1/10 10 2STW4466 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 80V ■ Complementary to 2STW1693 ■ Typical ft = 20MHz ■ Fully characterized at 150 oC Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCESAT behaviour. Recommended for 45W to 70W high fidelity audio frequency amplifier output stage. Table 1. Device summary Figure 1. Internal schematic diagram TO-247 1 2 3 Order code Marking Package Packaging 2STW4466 2STW4466 TO-247 Tube www.st.com |
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