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STF92 Datasheet(PDF) 2 Page - STMicroelectronics |
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STF92 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-amb • Thermal Resistance Junction-Ambient Max 96.1 oC/W • Device mounted on a PCB area of 1 cm2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -200 V VCB = -200 V TC = 150 oC VCB = -300 V -10 -10 -100 nA µA µA IEBO Emitter Cut-off Current (IC = 0) VEB = -5 V -50 nA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -100 µA -300 V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = -10 mA -300 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -100 µA -5 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = -30 mA IB = -5 mA -0.6 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = -30 mA IB = -5 mA -1.2 V hFE ∗ DC Current Gain IC = -30 mA VCE = -10 V 75 fT Transition Frequency IC = -15mA VCE = -10V f = 20 MHz 60 MHz CCBO Collector-Base Capacitance IE = 0 VCB = -10 V f = 1 MHz 6 pF CEBO Emitter-Base Capacitance IC = 0 VEB = -2 V f = 1 MHz 22 pF ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % STF92 2/4 |
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