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STN1NF10 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STN1NF10
Descripción Electrónicos  N-CHANNEL 100V - 0.7ohm - 1A SOT-223 STripFET™ II POWER MOSFET
PDF  8 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN1NF10 Datasheet(HTML) 3 Page - STMicroelectronics

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STN1NF10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 0.5 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
4
5.5
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 50 V ID= 1 A VGS= 10 V
4
1
1.5
6nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
ID = 0.5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
13
6.5
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
1
4
A
A
VSD (*)
Forward On Voltage
ISD = 1 A
VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
45
60
2.7
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance



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