Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Mexican  ▼
ALLDATASHEET.COM.MX

X  

USBLC6-2 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza USBLC6-2
Descripción Electrónicos  Very low capacitance ESD protection
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

USBLC6-2 Datasheet(HTML) 5 Page - STMicroelectronics

  USBLC6-2_08 Datasheet HTML 1Page - STMicroelectronics USBLC6-2_08 Datasheet HTML 2Page - STMicroelectronics USBLC6-2_08 Datasheet HTML 3Page - STMicroelectronics USBLC6-2_08 Datasheet HTML 4Page - STMicroelectronics USBLC6-2_08 Datasheet HTML 5Page - STMicroelectronics USBLC6-2_08 Datasheet HTML 6Page - STMicroelectronics USBLC6-2_08 Datasheet HTML 7Page - STMicroelectronics USBLC6-2_08 Datasheet HTML 8Page - STMicroelectronics USBLC6-2_08 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 14 page
background image
USBLC6-2
Technical information
5/14
We can significantly reduce this phenomena with simple layout optimization. It is for this
reason that some recommendations have to be followed (see 2.3: How to ensure good ESD
protection).
Figure 6.
ESD behavior: parasitic phenomena due to unsuitable layout
2.3
How to ensure good ESD protection
While the USBLC6-2 provides high immunity to ESD surge, efficient protection depends on
the layout of the board. In the same way, with the rail to rail topology, the track from data
lines to I/O pins, from VCC to VBUS pin and from GND plane to GND pin must be as short as
possible to avoid overvoltages due to parasitic phenomena (see Figure 6. and Figure 7. for
layout consideration)
VBUS
LI/O
LVBUS
LGND
LI/O
LGND
Vpin
CC
VCL
VF
I/O pin
VTRANSIL
V+ V
TRANSIL
F
-VF
VCL-
t = 1 ns
r
t
t
t = 1 ns
r
VCL+
GND pin
Data line
Positive
Surge
Negative
Surge
ESD surge on data line
di
dt
LI/O
+ LGND
di
dt
di
dt
-LI/O
- LGND
di
dt
di
dt
V
+ =V
+V + L
+ L
surge > 0
CL
TRANSIL
F
I/O
GND
V
= -V - L
- L
surge > 0
CL-
F
I/O
GND
di
dt
di
dt
di
dt
di
dt
di
dt
Rd.Ip
V
V
BR
TRANSIL
+
=
Figure 7.
ESD behavior: layout optimization
Figure 8.
ESD behavior: measurement
conditions
Unsuitable layout
Optimized layout
11
6
2
5
3
4
11
6
2
5
3
4
+5 V
IN
OUT
TEST BOARD
ESD SURGE



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com