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IRFIB7N50LPBF Datasheet(PDF) 4 Page - International Rectifier

No. de pieza IRFIB7N50LPBF
Descripción Electrónicos  SMPS MOSFET, HEXFET Power MOSFET
PDF  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFIB7N50LPBF Datasheet(HTML) 4 Page - International Rectifier

  IRFIB7N50LPBF Datasheet HTML 1Page - International Rectifier IRFIB7N50LPBF Datasheet HTML 2Page - International Rectifier IRFIB7N50LPBF Datasheet HTML 3Page - International Rectifier IRFIB7N50LPBF Datasheet HTML 4Page - International Rectifier IRFIB7N50LPBF Datasheet HTML 5Page - International Rectifier IRFIB7N50LPBF Datasheet HTML 6Page - International Rectifier IRFIB7N50LPBF Datasheet HTML 7Page - International Rectifier IRFIB7N50LPBF Datasheet HTML 8Page - International Rectifier IRFIB7N50LPBF Datasheet HTML 9Page - International Rectifier  
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IRFIB7N50LPbF
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Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Typical Source-Drain Diode
Forward Voltage
Fig 7. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 6. Typ. Output Capacitance
Stored Energy vs. VDS
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
50 100 150 200 250 300 350 400 450 500 550
VDS, Drain-to-Source Voltage (V)
0
2
4
6
8
10
12
0
1020
3040
5060
70
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS= 400V
ID= 6.8A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.01
0.10
1.00
10.00
100.00
TJ = 25°C
TJ = 150°C
VGS = 0V



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