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L9380 Datasheet(PDF) 9 Page - STMicroelectronics

No. de pieza L9380
Descripción Electrónicos  Triple high-side MOSFET driver
PDF  18 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9380 Datasheet(HTML) 9 Page - STMicroelectronics

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L9380
Functional description
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Functional description
The triple high-side Power-MOS Driver features all necessary control and protection
functions to switch on three Power-MOS transistors operating as High-Side switches in
automotive electronic control units. The key application field is relays replacement in
systems where high current loads, usually motors with nominal currents of about 40 A
connected to ground, has to be switched.
A high signal at the EN pin enables all three channels. With enable low gates are clamped to
ground. In this condition the gate sink current is higher than the specified 3 mA. An enable
low signal makes also a reset of the timer.
A low signal at the inputs switch on the gates of the external MOS. A short circuit at the input
leads to permanent activation of the concerned channel. In this case the device can be
disabled with the enable pin. The charge pump loading is not influenced due to the enable
input.
An external N-channel MOS driver in high side configuration needs a gate driving voltage
higher than VS. It is generated by means of a charge pump with integrated charge transfer
capacitors and one external charge storage capacitor CCP.
The charge pump is dimensioned to load a capacitor CCP of 33 nF in less than 20 ms up to
8V above VS. The value of CCP depends on the input capacitance of the external MOS and
the decay of the charge pump voltage down to that value where no significant influence on
the application occurs.
The necessary charging time for CCP has to be respected in the sequence of the input
control signals.
As a consequence the lower gate to source voltage can cause a higher drop across the
Power-MOS and get into overload condition. In this case the overload protection timer will
start.
After the protection time the concerned channel will be switched off. Channel 3 is not
equipped with an overload protection. The same situation can occur due to a discharge of
the storage capacitor caused by the gate short to ground. The gate driver that is supplied
from the pin CP, which is the charge pump output, has a sink and source current capability
of 3 mA. For a short-circuit of the load (source to ground) the L9380 has no gate to source
limitation. The gate source protection must be done externally.
Channel 1 and 2 provide drain to source voltage sensing possibility with programmable
shut-off delay when the activation threshold was exceeded.
This threshold VDSmin is set by the external resistor RD. The bias current flowing through this
resistor is determined by the programming resistor RPR. This external resistor RPR defines
also the charge and discharge current of the timer capacitor CCT. The drain to source
threshold VDSmin and the timer shut off delay time Toff can be calculated:
Toff = 4.4 CT RPR
V
DSmin
V
PR
R
D
R
PR
------------
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