STP7NB30 datasheet(3/9 Pages) STMICROELECTRONICS

No. de pieza	STP7NB30

Descripción Electrónicos	N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Time

Rise Time

VDD =150 V

ID = 3.5 A

RG =4.7

Ω

VGS =10 V

(see t est circuit, f igure 3)

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD = 240 V

ID =7.0 A VGS =10 V

7.5

6.5

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off -volt age Rise T ime

Fall T ime

Cross-over Time

VDD =240 V

ID = 7.0 A

RG =4.7

Ω VGS =10 V

(see t est circuit, f igure 5)

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

7. 0

VSD (

∗)Forward On Voltage

ISD =7.0 A

VGS =0

1. 6

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 7.0 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

(see t est circuit, f igure 5)

190

1.1

11.5

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

STP7NB30/STP7NB30FP

3/9

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