P75NF datasheet(1/11 Pages) STMICROELECTRONICS

No. de pieza	P75NF

Descripción Electrónicos	N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

PDF	11 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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April 2002

.

STP75NF75L

STB75NF75L STB75NF75L-1

N-CHANNEL 75V - 0.009

Ω - 75A D2PAK/I2PAK/TO-220

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.009Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW THRESHOLD DRIVE

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements

.

APPLICATIONS

s

SOLENOID AND RELAY DRIVERS

s

DC MOTOR CONTROL

s

DC-DC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

TYPE

VDSS

RDS(on)

ID

STB75NF75L/-1

STP75NF75L

75 V

<0.011

Ω

<0.011

Ω

75 A

1

2

3

1

3

1

2

3

TO-220

D2PAK

TO-263

I2PAK

TO-262

ABSOLUTE MAXIMUM RATINGS

(

•) Current limited by package

(

••) Pulse width limited by safe operating area.

(1) ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25 oC, ID = 37.5A, VDD = 30V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

75

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

75

V

VGS

Gate- source Voltage

± 15

V

ID(•)

Drain Current (continuous) at TC = 25°C

75

A

ID

Drain Current (continuous) at TC = 100°C

70

A

IDM(••)

Drain Current (pulsed)

300

A

Ptot

Total Dissipation at TC = 25°C

300

W

Derating Factor

2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

20

V/ns

EAS (2)

Single Pulse Avalanche Energy

680

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

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