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STP7NB80 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP7NB80
Descripción Electrónicos  N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET
PDF  9 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP7NB80 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 400 V
ID =3.5 A
RG =4.7
Ω
VGS =10 V
(see test circuit, figure 3)
20
10
ns
ns
Qg
Q gs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 640 V
ID =7 A VGS =10 V
RG =4.7
Ω
40
10
18
52
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise Time
Fall Time
Cross-over Time
VDD = 640 V
ID =7 A
RG =4.7
Ω VGS =10 V
(see test circuit, figure 5)
15
15
25
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
6. 5
26
A
A
VSD (
∗)
Forward On Volt age
ISD =6.5 A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 7 A
di/dt = 100 A/
µs
VDD = 100 V
Tj =150
oC
(see test circuit, figure 5)
750
7.10
19
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP7NB80/FP
3/9



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