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STP9NC60 Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STP9NC60
Descripción Electrónicos  N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET
PDF  9 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP9NC60 Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
T O- 220
T O-220F P
Rthj-ca se
Thermal Resistance Junction-case
Max
1.0
3.12
oC/W
Rthj-a mb
Rthc -sin k
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limit ed by Tj max,
δ <1%)
9A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
850
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
V( BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µAVGS =0
600
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating
Tc = 125
oC
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
VGS(th )
Gate Threshold Voltage VDS =VGS
ID =250
µA
23
4
V
RDS(on )
Static Drain-source On
Resistance
VGS = 10V
ID =4 A
0.6
0.75
Ω
ID(on)
On Stat e Drain Current
VDS >ID(on ) xRDS(on )max
VGS =10 V
9. 0
A
DYNAMIC
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconductance
VDS >ID(on ) xRDS(on )max
ID =4 A
10
S
Cis s
Cos s
Crs s
Input Capacit ance
Output Capacitance
Reverse T ransf er
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1400
196
31
pF
pF
pF
STP9NC60/FP
2/9



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