STPS1L30M datasheet(3/5 Pages) STMICROELECTRONICS

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STPS1L30M

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0.00

0.05

0.10

0.15

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0.25

0.30

0.35

0.40

0.45

0.50

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

(A)

F(AV)

δ = 0.05

δ = 0.1 δ = 0.2

δ = 0.5

δ = 1

(W)

F(AV)

δ=tp/T

Fig. 1: Conduction losses versus average current.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

100

125

150

(°C)

amb

th(j-a)=Rth(j-c)

th(j-a)=270°C/W

(A)

F(AV)

Fig. 2: Average forward current versus ambient

temperature (

δ = 0.5)

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

C=25°C

C=75°C

C=125°C

δ=0.5

I (A)

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

t (s)

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.

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