2STR1215 datasheet(4/10 Pages) STMICROELECTRONICS

No. de pieza	2STR1215

Descripción Electrónicos	Low voltage fast-switching NPN power transistor

PDF	10 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Electrical characteristics

2STR1215

4/10

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Pulsed duration = 300 µs, duty cycle

≤1.5%

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = 15 V

0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = 4 V

0.1

µA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

V(BR)CEO

(1)

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 0.1 A

IB = 1mA

IC = 1 A

IB = 100 mA

IC = 2 A

IB = 200 mA

0.25

0.4

0.15

0.5

0.85

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 1 A

IB = 100 mA

0.9

1.25

hFE

(1)

DC current gain

IC = 50 mA

VCE = 2 V

IC = 0.5 A

VCE = 2 V

IC = 1 A

VCE = 2 V

IC = 2 A

VCE = 2 V

200

130

280

560

CCBO

Collector-base

capacitance (IE = 0 )

VCB = 10 V

f = 1 MHz

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = 1.5 A

VCC = 10 V

IB1 = -IB2 = 150 mA

310

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