2SC1213 datasheet(2/5 Pages) RENESAS

No. de pieza	2SC1213

Descripción Electrónicos	Silicon NPN Epitaxial

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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2 / 5 page

2SC1213, 2SC1213A

Rev.2.00 Aug 10, 2005 page 2 of 4

Electrical Characteristics

(Ta = 25°C)

2SC1213

2SC1213A

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

V(BR)CBO

—

IC = 10

µA, IE = 0

Collector to emitter

breakdown voltage

V(BR)CEO

—

IC = 1 mA, RBE =

∞

Emitter to base

breakdown voltage

V(BR)EBO

—

IE = 10

µA, IC = 0

Collector cutoff current

ICBO

—

0.5

—

0.5

µA

VCB = 20 V, IE = 0

DC current transfer ratio

hFE*

—

320

—

320

VCE = 3 V, IC =10 mA

hFE

—

VCE = 3 V,

IC = 500 mA*

Collector to emitter

saturation voltage

VCE(sat)

—

0.2

0.6

—

0.2

0.6

IC = 150 mA,

IB = 15 mA*

Base to emitter voltage

VBE

—

0.64

—

0.64

—

VCE = 3 V, IC = 10 mA

Notes: 1. The 2SC1213 and 2SC1213A are grouped by hFE as follows.

2. Pulse test

60 to 120

100 to 200

160 to 320

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