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STP24NM65N Datasheet(PDF) 6 Page - STMicroelectronics

No. de pieza STP24NM65N
Descripción Electrónicos  N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET
PDF  19 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP24NM65N Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =325 V, ID = 9.5 A
RG =4.7 Ω VGS = 10 V
(see Figure 18)
25
10
80
20
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
19
76
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 19 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
460
7
30
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A, di/dt = 100 A/µs
VDD = 100 V, TJ = 150 °C
(see Figure 20)
620
9
29
ns
µC
A



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