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2SC5594XP-TL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SC5594XP-TL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 8 page  Rev.2.00 Aug 10, 2005 page 1 of 7 2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0749-0200 (Previous ADE-208-798) Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 1. Emitter 2. Collector 3. Emitter 4. Base 1 4 3 2 Note: Marking is “XP-”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 4.5 V Emitter to base voltage VEBO 0.8 V Collector current IC 35 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C |
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