HAF2021 datasheet(2/9 Pages) RENESAS

No. de pieza	HAF2021

Descripción Electrónicos	Silicon N Channel MOSFET Series Power Switching

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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HAF2021(L), HAF2021(S)

Rev.2.00, Mar.05.2004, page 2 of 8

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

Gate to source voltage

VGSS

Gate to source voltage

VGSS

–2.5

Drain current

Drain peak current

ID(pulse)

Note1

100

Body-drain diode reverse drain current

IDR

Channel dissipation

Pch

Note2

100

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25°C

Typical Operation Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

VIH

3.5

—

VIL

——

1.2

Input current

IIH1

—

100

µAVi = 6 V, VDS = 0

(Gate non shut down)

IIH2

——

µA

Vi = 3.5 V, VDS = 0

IIL

——

µA

Vi = 1.2 V, VDS = 0

Input current

IIH(sd)1

—0.6

—mA

Vi = 6 V, VDS = 0

(Gate shut down)

IIH(sd)2

—

0.35

—

Vi = 3.5 V, VDS = 0

Shut down temperature

Tsd

—

175

—

°C

Channel temperature

Gate operation voltage

VOP

3.5

—

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