HSG2004 datasheet(2/13 Pages) RENESAS

No. de pieza	HSG2004

Descripción Electrónicos	SiGe HBT High Frequency Medium Power Amplifier

PDF	13 Pages

Scroll/Zoom	100%

Fabricante Electrónico	RENESAS [Renesas Technology Corp]

Página de inicio	http://www.renesas.com

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2 / 13 page

HSG2004

Rev.4.00 Jun 21, 2006 page 2 of 12

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

DC current transfer ratio

hFE

170

240

320



VCE = 3 V, IC = 30 mA

Reverse Transfer Capacitance

Cre



0.6

VCB = 3 V, IE = 0, f = 1 MHz,

emitter grounded

Transition Frequency



30.0



GHz

VCE = 3 V, IC = 30 mA,

f = 1 GHz

Maximum Stable Gain

MSG

15.5



VCE = 3 V, IC = 30 mA,

f = 5.8 GHz

Maximum Available Gain

MAG



VCE = 3 V, IC = 30 mA,

f = 2.4 GHz

Maximum Available Gain

MAG



VCE = 3 V, IC = 30 mA,

f = 5.8 GHz

Power Gain



11.5



VCE = 3.6 V, Iidle = 30 mA,

f = 5.8 GHz, Pin = +0 dBm

1dB Compression Point at output

P1dB



+14.5



dBm

VCE = 3.6 V, Iidle = 30 mA,

f = 5.8 GHz

Saturation Output Power

Po(sat)



+22



dBm

VCE = 3.6 V, Iidle = 30 mA,

f = 5.8 GHz, Pin = +0 dBm

Main Characteristics

100

150

200

Collector Power Dissipation Curve

Ambient Temperature

Ta (°C)

1500

1000

500

*(4 x 4 x 1mm) on PCB

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