BB503C datasheet(8/11 Pages) RENESAS

No. de pieza	BB503C

Descripción Electrónicos	Built in Biasing Circuit MOS FET IC UHF RF Amplifier

PDF	11 Pages

Scroll/Zoom	100%

Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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8 / 11 page

BB503C

Rev.5.00 Aug 10, 2005 page 8 of 10

VDS = 5 V , VG1 = 5 V

VG2S = 4 V , RG = 47 kΩ ,

Zo = 50

Ω

VDS = 5 V , VG1 = 5 V

VG2S = 4 V , RG = 47 kΩ ,

Zo = 50

Ω

VDS = 5 V , VG1 = 5 V

VG2S = 4 V , RG = 47 kΩ ,

Zo = 50

Ω

VDS = 5 V , VG1 = 5 V

VG2S = 4 V , RG = 47 kΩ ,

Zo = 50

Ω

Test Condition:

1.5

–2

–3

–4

–5

–10

–.2

–.4

–.6

–.8

–1

–1.5

.6 .8 1

3 4 5

1.5

Scale: 1 / div.

120

150

180

–150

–90

–60

–30

–120

Scale: 0.002 / div.

120

150

180

–150

–90

–60

–30

–120

1.5

–2

–3

–4

–5

–10

–.2

–.4

–.6

–.8

–1

–1.5

.6 .8 1

3 4 5

1.5

Test Condition:

50 to 1000 MHz (50 MHz step)

Test Condition:

50 to 1000 MHz (50 MHz step)

Test Condition:

50 to 1000 MHz (50 MHz step)

S11 Parameter vs. Frequency

S21 Parameter vs. Frequency

S12 Parameter vs. Frequency

S22 Parameter vs. Frequency

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