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STU95N4F3 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STU95N4F3
Descripción Electrónicos  N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET??Power MOSFET
PDF  14 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU95N4F3 Datasheet(HTML) 5 Page - STMicroelectronics

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STD95N4F3 - STP95N4F3 - STU95N4F3
Electrical characteristics
5/14
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 15)
15
50
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 15)
40
15
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
80
320
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD=80A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A,
di/dt = 100A/µs,
VDD=30V, Tj=150°C
(see Figure 14)
45
60
2.8
ns
nC
A



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