STL50NH3LL datasheet(4/12 Pages) STMICROELECTRONICS

No. de pieza	STL50NH3LL

Descripción Electrónicos	N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT??(6x5) ultra low gate charge STripFET™Power MOSFET

PDF	12 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Electrical characteristics

STL50NH3LL

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 25 0µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 6.5 A

VGS= 4.5 V, ID= 6. 5A

0.011

0.012

0.013

0.015

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward transconductance

VDS =10 V, ID = 6.5 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

965

285

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 13 A

VGS =4.5 V

(see Figure 8)

3.7

Gate input resistance

f=1 MHz gate DC bias = 0

test signal level = 20 mV

open drain

0.5

1.5

2.5

Ω

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