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TSH690 Datasheet(PDF) 6 Page - STMicroelectronics

No. de pieza TSH690
Descripción Electrónicos  40MHz to 1GHz AMPLIFIER
PDF  10 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TSH690 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 1 : Typical 300MHz-1000MHz Biasing Circuit
CIRCUIT DESCRIPTION
The TSH690 is 50
Ω input/outputinternallymatched
from 300MHz to 1000MHz. Due to its open-collec-
tor structure, the output RF port must be tied to
Vcc2. The pin 8 allows a bias current adjust to set
the output power and the gain. The circuit is pack-
aged in SO8 for thermal dissipation considerations.
MATCHING
Within the 300-1000MHz band, although the circuit
is matched, the output return loss can be improved
by adding a serial inductor (L2) between the RF
output and VCC2 (56nH @ 450MHz and 10nH @
900MHz). Below 300MHz, using the S-parameters
matrix, specific input/outpu t matching networks
can be calculated to maximize electrical perform-
ances.
DC BLOCKING
Because input/output are respectively internal/ex-
ternal biased, DC blocks (C1, C2) are recom-
mended on both RF ports to guarantee a DC
isolation from the next cells. Above 500MHz, 100pF
is suggested whereas below, 1nF is better and far
below (less than 100MHz), 10nF is prefered.
BIASING
The amplifier can operate in the range of 1.5V to
5V and offers a bias current adjust function
(Vbias pin) which enables the trimming of the RF
output power (AB class Amplifier) by tuning a se-
ries variable resistor (Rbias).
When Vbias is wired to the Vcc rail, the current
consumption is maximized getting the best linear-
ity (A class Amplifier) whereas biasing to
Ground, the IC is set in power down mode.
For higher supply voltage than 4V to reach high
output power, the serial resistor (R1) is strongly
recommended to increase the efficiency of the
amplifier and therefore reduce the thermal dissi-
pation of the circuit.
DECOUPLING
As with any RF devices, the supply voltage decou-
pling must be done carefully using a 1nF bypass
capacitor (C3, C5) placed as close as possible to
the device pins and could be also improved by
adding a 150nH RF choke inductance (L1). Con-
cerning the Vbias pin, a 10nF decoupling capacitor
(C4) is recommended while placing on board is not
critical. Note that Surface Mounted Devices (SMD)
components are prefered for RF applications due
to the right behaviour in high frequencies while low
inductor values (few 10nH) can be printed on
board.
APPLICATIONS INFORMATION
TSH690
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