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VN02ANSP Datasheet(PDF) 5 Page - STMicroelectronics |
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VN02ANSP Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 9 page ![]() FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates over temperature conditions. The truth table shows input, diagnostic output status and output voltage level in normal operation and fault conditions. The output signals are processed by internal logic. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically turned on again. To ensure the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 28V according to: Vds =VCC -IOV *(Ri +Rw +Rl) where: Ri = internal resistence of Power Supply Rw = Wires resistance Rl = Short Circuit resistance Driving inductive loads, an internal function of the device ensures the fast demagnetization with typical voltage (Vdemag) of -18V. This function allows the reduction of the power dissipation according to the formula: Pdem = 0.5 * Lload *(Iload) 2 * [(VCC +Vdem)/Vdem]* f where f = Switching Frequency Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. PROTECTING THE DEVICE AGAINST RE- VERSE BATTERY The simpliest way to protect the device against a continuous reverse battery voltage (-36V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (Fig. 3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil,Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shut-down level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of Vih,Vil and Vstat. This solution allows the use of a standard diode. Figure 2: Over Current Test Circuit VN02ANSP 5/9 |
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