VND10B datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resist ance Junct ion-case

Max

Thermal Resist ance Junction-ambient

Max

1.65

oC/W

ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40

≤ Tj ≤ 125 oC unless otherwise specified)

POWER

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

VCC

Supply Voltage

In(*)

Nominal Current

T c =85

oCVDS(on)

≤ 0.5 VCC =13 V

3.4

5.2

Ron

On St ate Resist ance

IOU T =In VCC =13 V

Tj =25

0.065

0.1

Ω

I S

Supply Current

Of f State

Tj =25

oCVCC = 13 V

100

µA

VDS(MAX)

Maximum Voltage Drop IOUT =13 A

Tj =85

oCVCC =13 V

1.2

Output to GND internal

I mpedance

Tj =25

oC5

Ω

SWITCHING

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

td(on)(^)

Turn-on Delay Time Of

Output Current

Rout =2.7

Ω

200

µs

tr(^)

Rise Time Of Output

Current

Rout =2.7

Ω

110

360

µs

td(off)(^)

Turn-off Delay Time Of

Output Current

Rout =2.7

Ω

140

500

µs

tf(^)

Fall Time Of Out put

Current

Rout =2.7

Ω

360

µs

(di/dt) on

Turn-on Current Slope

Rout =2.7

Ω

0.003

0.1

µs

(di/dt)off

Turn-off Current Slope

Rout =2.7

Ω

0.005

0.1

µs

LOGIC INPUT

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

VIL

Input Low Level

Voltage

1.5

VIH

Input High Level

Voltage

3.5

(

•)V

VI(hyst.)

I nput Hysteresis

Voltage

0.2

0.9

1.5

IIN

I nput Current

VIN =5 V

Tj =25

100

µA

VICL

I nput Clamp Voltage

IIN =10 mA

IIN =-10 mA

-0. 7

VND10B

3/11

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