VNQ600A datasheet(9/18 Pages) STMICROELECTRONICS

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VNQ600A

GND

PROTECTION

NETWORK

AGAINST

REVERSE BATTERY

Solution 1: Resistor in the ground line (RGND only). This

can be used with any type of load.

The following is an indication on how to dimension the

RGND resistor.

1) RGND ≤ 600mV / 2(IS(on)max).

2) RGND ≥ (−VCC) / (-IGND)

where -IGND is the DC reverse ground pin current and can

be found in the absolute maximum rating section of the

device’s datasheet.

Power Dissipation in RGND (when VCC<0: during reverse

battery situations) is:

PD= (-VCC)

2/R

GND

This resistor can be shared amongst several different

HSD. Please note that the value of this resistor should be

calculated with formula (1) where IS(on)max becomes the

sum of the maximum on-state currents of the different

devices.

Please note that if the microprocessor ground is not

common with the device ground then the RGND will

produce a shift (IS(on)max * RGND) in the input thresholds

and the status output values. This shift will vary

depending on how many devices are ON in the case of

several high side drivers sharing the same RGND.

If the calculated power dissipation leads to a large resistor

or several devices have to share the same resistor then

the ST suggests to utilize Solution 2 (see below).

Solution 2: A diode (DGND) in the ground line.

A resistor (RGND=1kΩ) should be inserted in parallel to

DGND if the device will be driving an inductive load.

This small signal diode can be safely shared amongst

several different HSD. Also in this case, the presence of

the ground network will produce a shift (

j600mV) in the

input threshold and the status output values if the

microprocessor ground is not common with the device

ground. This shift will not vary if more than one HSD

shares the same diode/resistor network.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the

load dump peak voltage exceeds VCC max DC rating. The

same applies if the device will be subject to transients on

the VCC line that are greater than the ones shown in the

ISO T/R 7637/1 table.

APPLICATION SCHEMATIC

VCC1,2

OUTPUT2

C. SENSE 1

Dld

+5V

Rprot

OUTPUT1

RSENSE1,2,3,4

INPUT1

C. SENSE 2

INPUT2

µC

Rprot

INPUT3

INPUT4

C. SENSE 3

C. SENSE 4

DGND

RGND

VGND

GND1,2

GND3,4

OUTPUT3

Rprot

VCC3,4

OUTPUT4

Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.

VNQ600A Datasheet(PDF) 9 Page - STMicroelectronics

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